METHOD OF MANUFACTURING THIN-FILM TRANSISTOR

摘要

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin-film transistor improving reproducibility of a process. Ž<P>SOLUTION: In the thin-film transistor 1, a gate electrode 12 and an oxide semiconductor film 15 are disposed on a substrate 11 with a gate insulating film 13 interposed therebetween and a source electrode 14A and a drain electrode 14B are disposed in contact with the oxide semiconductor film 15. The oxide semiconductor film 15 is deposited using a DC sputtering method and DC power for deposition is set according to a carrier density D. Control of the carrier density is facilitated by utilizing a proportional relation between the DC power and the carrier density D. A result of control is less susceptible to the accuracy of another equipment such as an MFC (Mass Flow Controller) than in the case of controlling the carrier density by oxygen partial pressure adjustment. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž