发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD FOR MANUFACTURING ELECTRODE STRUCTURE, SEMICONDUCTOR LIGHT-EMITTING ELEMENT, ELECTRODE STRUCTURE
摘要 <P>PROBLEM TO BE SOLVED: To improve the junction properties and the reliability of an electrode connected to a laminate or to a power-supplied body. <P>SOLUTION: The method for manufacturing a semiconductor light-emitting element includes the formation of a first bonding pad electrode 200, which is used for electrical connection with the outside and is provided with a junction layer laminated into an island shape on a transparent electrode 170; an upper surface 200e formed on the top of the junction layer; and an inclined plane 200f that inclines toward the transparent electrode 170 from the periphery of the upper surface 200e. The first bonding pad electrode 200 covers the junction layer and is laminated on the junction layer and the transparent electrode 170 so that all peripheral edges touch the transparent electrode 170. Concerning the first bonding pad electrode, the outside diameter of the upper surface 200e is set to be a first outer diameter D1, the outside diameter of the inclined plane 200f is set to be a second outside diameter D2, the height of the upper surface 200e from the transparent electrode 170 is set to be a surface height H; and with S=2&times;H/(D2-D1), the first bonding pad electrode has a form that satisfies the condition 0<S&le;0.6. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010147195(A) 申请公布日期 2010.07.01
申请号 JP20080321601 申请日期 2008.12.17
申请人 SHOWA DENKO KK 发明人 OBA REIMI;KAMEI KOJI
分类号 H01L33/36;H01L33/32 主分类号 H01L33/36
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