| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a solar cell element which has more superior power generation efficiency than before. <P>SOLUTION: The solar cell element 100A has an n-type semiconductor region 2, a p-type semiconductor layer 5, a p-type electrode 6, and an n-type electrode 9. The p-type semiconductor layer 5 is formed adjacently to part of the reverse side of the n-type semiconductor region 2, the p-type electrode 6 is formed at a position opposed to the n-type semiconductor region 2 across the p-type semiconductor layer 5, and the n-type electrode 9 is formed on the reverse surface side of the n-type semiconductor region 2 adjacently to a region where the p-type semiconductor layer 5 is not formed, the p-type semiconductor layer 5 being made smaller in concentration of p-type conductivity type determining elements as being closer to the reverse surface of the n-type semiconductor region 2. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
