发明名称 CLEANING SOLUTION FOR SUBSTRATE FOR SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING SUBSTRATE FOR SEMICONDUCTOR DEVICE
摘要 To provide a cleaning solution for a substrate for a semiconductor device which is excellent in the ability to remove particles, organic contaminants, metal contaminants and composite contaminants of an organic matter and a metal attached on a substrate surface, whereby the substrate surface can be highly cleaned, without being corroded. Particularly, to provide a cleaning solution which is excellent in the ability to clean low dielectric constant (Low-k) materials on which liquid is easily repelled due to hydrophobic and of which the ability to remove particles is poor. A cleaning solution for a substrate for a semiconductor device, which comprises the following components (A) and (B): (A) an organic acid (B) a nonionic surfactant having an HLB value of from 5 to less than 13.
申请公布号 US2010167972(A1) 申请公布日期 2010.07.01
申请号 US20080600545 申请日期 2008.05.16
申请人 MITSUBISHI CHEMICAL CORPORATION 发明人 KAWASE YASUHIRO;IKEMOTO MAKOTO;ITOU ATSUSHI;ISHIKAWA MATOKO
分类号 C11D3/20 主分类号 C11D3/20
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