发明名称 Deposition Apparatus and Substrate Manufacturing Method
摘要 A deposition apparatus includes a vacuum chamber, a plasma gun adapted to emit a plasma onto a deposition material accommodated in the vacuum chamber, and a discharge gas supply unit adapted to supply a discharge gas to the plasma gun. The deposition apparatus comprises a mass flow controller adapted to change a flow rate of the discharge gas, and a control circuit which is connected to the mass flow controller and adapted to control, the change in flow rate by the mass flow controller, based on a predetermined setting.
申请公布号 US2010166979(A1) 申请公布日期 2010.07.01
申请号 US20090639257 申请日期 2009.12.16
申请人 CANON ANELVA CORPORATION 发明人 MORIWAKI TAKAYUKI
分类号 C23C16/52;C23C16/00;C23C16/48 主分类号 C23C16/52
代理机构 代理人
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