SEMICONDUCTOR DEVICE, SCHOTTKY BARRIER DIODE, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

Disclosed is a semiconductor device wherein the trade-off between voltage-withstanding ability and ON-resistance is improved and performance is improved. The semiconductor device (1) includes: semiconductor layers (20 to 23); an anode electrode (12); and a cathode electrode (13). The semiconductor layers include a variable-composition layer (23). Part of the anode electrode (12) is electrically connected with one of the main faces of the variable-composition layer (23) by a Schottky junction. The cathode electrode (13) is electrically connected with the other main face of the variable-composition layer (23) by being connected with another part of the semiconductor layer. Voltage can be applied to the variable composition layer (23) in the direction perpendicular to the main faces by the anode electrode (12) and cathode electrode (13). The variable-composition layer (23) has a composition that varies in the direction perpendicular to the main faces of the variable-composition layer (23), from the side of the cathode electrode (13) towards the side of the anode electrode (12), has negative polarisation charge generated by this varying composition, and includes donor impurities.