METHOD OF MANUFACTURING EPITAXIAL WAFER AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing an epitaxial wafer having a superjunction structure which suppresses formation of a cavity and saves trouble and cost, and to provide a method of manufacturing a semiconductor device. SOLUTION: The method of manufacturing the epitaxial wafer in which the epitaxial wafer 10 which has the superjunction structure 12 is formed includes the following processes. A substrate 11 is prepared. A first layer of a first conductivity type is formed on the substrate 11. A mesa structure is formed in the first layer. A second layer of a second conductivity type is formed in a recessed part of the mesa structure of the first layer by a liquid-phase growing method. The method of manufacturing the semiconductor device includes the following processes. The epitaxial wafer 10 is manufactured. A semiconductor layer is formed on the epitaxial wafer 10. COPYRIGHT: (C)2010,JPO&INPIT