| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a heat treatment apparatus which can prevent contaminants from sticking onto a substrate under treatment, and to provide a substrate treatment apparatus which can prevent reaction byproducts from sticking to the wall surface of a reaction chamber. Ž<P>SOLUTION: In the heat treatment apparatus, a gas-blow portion 34 provided in a substrate transfer device 26 injects gas toward a substrate support 30, in a direction parallel to the mounting direction of a wafer. An exhaust treatment device 38 is arranged so that the substrate support 30 is held in between the exhaust treatment device and the gas blow portion 34 and is constituted so that the gas injected from the gas blow portion 34 and the contaminants blown out by the gas can be collected and exhausted. The contaminants are removed, by allowing the gas blow portion 34 to approach a part of the substrate support 30, where the contaminants are accumulated and by injecting the gas, while accurately controlling the position with respect to the contaminants. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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