发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
This invention is directed to offer a package type semiconductor device that can realize a smaller size device and its manufacturing method as well as a small stacked layer type semiconductor device and its manufacturing method. A device component 1 and a pad electrode 4 electrically connected with the device component 1 are formed on a semiconductor substrate 2. A supporting member 7 is bonded to a surface of the semiconductor substrate 2 through an adhesive layer 6. There is formed a through-hole 15 in the supporting member 7 penetrating from its top surface to a back surface. Electrical connection with another device is made possible through the through-hole 15. A depressed portion 12 is formed in a partial region of the top surface of the supporting member 7. Therefore, all or a portion of another device or a component can be disposed utilizing a space in the depressed portion 12. When a stacked layer type semiconductor device is formed, stacking is made by fitting a portion of a semiconductor device 50 in an upper layer to an inside of the depressed portion 12.
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申请公布号 |
US2010164086(A1) |
申请公布日期 |
2010.07.01 |
申请号 |
US20070376917 |
申请日期 |
2007.08.02 |
申请人 |
SANYO ELECTRIC CO., LTD.;SANYO SEMICONDUCTOR CO., LTD. |
发明人 |
NOMA TAKASHI;MORITA YUICHI;YAMADA HIROSHI;OKADA KAZUO;KITAGAWA KATSUHIKO;OKUBO NOBORU;ISHIBE SHINZO;SHINOGI HIROYUKI |
分类号 |
H01L25/065;H01L21/60;H01L21/77;H01L23/488;H01L23/52 |
主分类号 |
H01L25/065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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