| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of removing damage and stresses caused by damage from a sidewall part, a lower edge part and corners of the die, without having to apply etching to a semiconductor wafer from the rear surface thereof. SOLUTION: The semiconductor wafer 11, having an operating layer, is mounted on a carrier in a state where the operation layer is separated from the carrier 13 and dicing is applied on the carrier from the principal surface of the semiconductor wafer, until at least the half way thereof. The semiconductor wafer to which the dicing is applied to the half way thereof is subjected to etching from the principal surface thereof, employing a natural etching agent 140, under the condition that the same be mounted on the carrier, whereby sufficient semiconductor material is removed from the die manufactured by the semiconductor wafer which has been subjected to dicing, at least to the half way thereof, to remove at least some defects caused by the dicing thereby improving the flexure bending strength of the die. COPYRIGHT: (C)2010,JPO&INPIT
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