发明名称 APPARATUS FOR PULLING SILICON SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide an apparatus for pulling a silicon single crystal capable of preventing a powdery sublimable dopant which passed a through-hole of a sample pipe from falling to a melt. SOLUTION: The apparatus for pulling a silicon single crystal 1 is equipped with a pulling furnace 2, a sample container 6 which is installed at the inside or the outside of the pulling furnace 2 and houses a sublimable dopant 23 which is supplied to a melt 5, a hollow supplying part 7 which is installed in the inside of the pulling furnace 2 and connected to the sample container 6 and supplies the sublimable dopant supplied from the sample container 6 to the melt 5, a cylindrical heat insulating member 8 which is installed at the outside of the supplying part 7 and insulates a silicon single crystal 41 from radiant heat from the melt 5, and a flow rectifier tube 15 installed in the inside of the supplying part 7 in which gas discharged so that impurities inside of the pulling furnace 2 are removed circulates in a vertical direction of the pulling furnace 2. The heat insulating member 8 is equipped with a placing part 18 for placing the flow rectifier tube 15 at the internal wall surface of the heat insulating member 8 at least at the lower side of a moving range of the sample container 6. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010143777(A) 申请公布日期 2010.07.01
申请号 JP20080321126 申请日期 2008.12.17
申请人 SUMCO TECHXIV CORP 发明人 NARUSHIMA YASUTO;KUBOTA TOSHIMICHI;OGAWA FUKUO;KAWAZOE SHINICHI;FUKUDA TOMOHIRO
分类号 C30B15/04 主分类号 C30B15/04
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