| 摘要 |
<p>PURPOSE: A photoresist composite for an immersion lithography is provided to prevent the leakage of the photoresist composite by a water soluble medium during the immersion lithography by applying the strong hydrophobicity to a photoresist film layer. CONSTITUTION: A photoresist composite for an immersion lithography contains a fluorine group compound, a photosensitive polymer, a photo acid generator, and an organic solvent. The fluorine group compound is marked with chemical formula 1 or chemical formula 2. In the chemical formulas, a refers to O, S, or N. The photosensitive polymer includes a monomer marked with chemical formula 3. In the chemical formula 3, R refers to hydrogen, or a fluorine substituted or non-substituted alkyl or cycloalkyl group with the carbon number of 1~30.</p> |
