| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor element in which a substrate for growth can be easily peeled by wet etching processing and further improvement in light extraction efficiency and securing of mechanical strength are made compatible. <P>SOLUTION: The method of manufacturing the semiconductor element includes: a process of forming a first cavity-containing layer containing a plurality of first cavities on a substrate for growth; a process of forming a second cavity-containing layer containing a plurality of second cavities on the first cavity-containing layer, respective partition wall portions between the second adjacent cavities being provided above the first cavities; a process of epitaxially growing a semiconductor layer on the second cavity-containing layer; a process of bonding a support substrate onto the semiconductor layer; and a process of making an etchant flow in into each of the first and second cavities to connect the first cavities and second cavities, and removing the substrate for growth from the semiconductor layer. <P>COPYRIGHT: (C)2010,JPO&INPIT |
