METHOD FOR MANUFACTURING SEMICONDUCTOR, AND APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, wherein a silicon substrate on which an insulating film is partially formed can be covered with a single crystal; and to provide a substrate processing apparatus. SOLUTION: An a-Si film 14 is formed on a Si substrate 10 on which an insulating film is partially formed (Fig.1(b)). Heat treatment is applied to the Si substrate 10, and thereby solid phase epitaxial crystallization of a-Si is performed by using the Si crystal of the substrate as a seed crystal (Fig.1(c)). A resist film 18 is formed so that a sufficiently epitaxially crystallized region is protected in the thickness direction of the substrate (Fig.1(d)), and etching treatment is performed (Fig.1(e)). Then, the resist film 18 is removed by ashing treatment and an a-Si film is formed again on the Si substrate 10 (Fig.1(f)). By applying the heat treatment again, solid phase epitaxial crystallization of a-Si is performed (Fig.1(g)). COPYRIGHT: (C)2010,JPO&INPIT