| 摘要 |
<p>Disclosed is a sputtering apparatus (10) comprising: a chamber (12) which is held at a lower pressure than the outside; a holding unit (16) which holds a substrate (14) within the chamber (12); a rotatable tubular rotary cathode (18), which is so arranged that the circumferential surface thereof faces the substrate (14) held by the holding unit (16), and to which power for sputtering a target material on the surface is supplied; a metal material supply means capable of supplying a metal material to the surface of the rotary cathode (18); and a gas-shielding member (130) which controls the movement of a gas between a film formation chamber (22) and a metal material supply chamber (24). The metal material supply means has a material supply channel (220) that is capable of supplying, from the outside, a material which is to be formed into a film on the surface of the rotary cathode (18) by a chemical reaction, said film serving as the target material.</p> |
