SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME

摘要

Provided are a semiconductor device wherein switching loss is reduced, and a stable movement thereof and the reliability can be ensured; and a method for producing the same.  A gate insulation film (37) is provided over a n-type source region (34), a p-type body region (33), and a depression region (36).  A gate electrode (38) is provided on the gate insulation film (37) so that the gate electrode covers a part of the n-type source region (34), a part of the p-type body region (33), and a part of the depression region (36); and an end of the gate electrode is disposed above the depression region (36).  The gate insulation film (37) is formed so that a thickness tdep thereof at a position corresponding to the end of the gate electrode (38) on the depression region (36) is larger than a thickness tch thereof on the p-type body region (33) which functions as a channel region.