发明名称 PHYSICAL VAPOR DEPOSITION APPARATUS
摘要 PURPOSE: A physical vapor deposition device is provided to prevent particles on a film by reducing stress which is applied in the film according to a temperature change. CONSTITUTION: A physical vapor deposition device comprises an exterior wall(110), a shield(130), a heater(140), a clamp(150), a target(160), and a cooling water line(120). The exterior wall divides the space of the chamber. The shield protects the exterior wall. The heater heats a wafer. The clamp fixes the wafer. The target emits atom using a plasma and evaporates on the upper side of the wafer. The cooling water line covering shield is formed inside the exterior wall.
申请公布号 KR20100073565(A) 申请公布日期 2010.07.01
申请号 KR20080132278 申请日期 2008.12.23
申请人 DONGBU HITEK CO., LTD. 发明人 MUN, KYUNG SEOK
分类号 C23C14/00 主分类号 C23C14/00
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