摘要 |
A capacitor and methods for manufacturing the capacitor are disclosed. The method may include forming a first electrode on a substrate, forming a dielectric layer on the first electrode, the dielectric layer having a first silicon oxide (SiO2) layer, a zirconium-doped hafnium oxide (Zr-doped HfO2) layer and a second silicon oxide layer sequentially, and forming a second electrode on the dielectric layer.
|