发明名称 Light emitting device and method of manufacturing method thereof and thin film forming apparatus
摘要 A method of manufacturing a light emitting device of upward emission type and a thin film forming apparatus used in the method are provided. A plurality of film forming chambers are connected to a first transferring chamber. The plural film forming chambers include a metal material evaporation chamber, an EL layer forming chamber, a sputtering chamber, a CVD chamber, and a sealing chamber. By using this thin film forming apparatus, an upward emission type EL element can be fabricated without exposing the element to the outside air. As a result, a highly reliable light emitting device is obtained.
申请公布号 US7744949(B2) 申请公布日期 2010.06.29
申请号 US20080327871 申请日期 2008.12.04
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KONUMA TOSHIMITSU;YAMAZAKI HIROKO
分类号 B05D5/06;B05D1/32;C23C14/00;C23C16/00;H01L27/32;H01L51/56 主分类号 B05D5/06
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