| 摘要 |
PURPOSE: A metal for manufacturing a semiconductor device is provided to effectively remove a polymer which is formed on the sidewall of the metal line by additionally performing a cleaning process with a fluoric acid after a solvent treatment is performed. CONSTITUTION: A metal material(210) is formed on a semiconductor substrate(200). A photo resist pattern is formed on the metal material. A metal line is formed by isotropically etching the metal material using the photo resist pattern as a mask. A first solvent treatment is performed with respect to a polymer on the sidewall of the metal line. A fluoric acid treatment is performed with respect to the polymer. The semiconductor substrate is cleaned with de-ionized water.
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