METHOD OF FIELD CMOS TRANSISTOR FORMATION USING DIELECTRICS BASED ON METAL OXIDES WITH HIGH INDUCTIVE CAPACITY RATE AND METAL GATES, AND STRUCTURE OF FIELD CMOS TRANSISTOR

摘要

FIELD: electricity. ^ SUBSTANCE: method of field CMOS transistor formation involves precipitation of 1-10 nm thick dielectric layer with high inductive capacity rate on semiconductor substrate and application of 0.15-0.41 nm thick antimony (Sb) layer onto the dielectric layer. Metal gate is made of nickel silicide (NiSi) of 300-3000 nm thickness. Semiconductor substrate can be made of silicon (Si) with 0.1-1 nm thick SiO2 sublayer on it. Also invention claims structure manufactured by the described method. ^ EFFECT: control of field n-type transistor switching voltage, reduction of switching voltage of field n-type transistor with switching voltage stability increasing. ^ 14 cl, 3 dwg, 1 ex