发明名称 METHOD TO DETERMINE ELECTRON FLOW DENSITY DISTRIBUTION OVER FLOW SECTION
摘要 FIELD: physics. ^ SUBSTANCE: proposed method comprises arranging long-persistence phosphor-target on flow path, irradiating said target by electron flow, producing on target surface of luminescent image of electron flow section and determining electron flow distribution over said section. Note here that said long-persistence phosphor-target represents nano-structure Be2(Si0,8Ge0,2)O4-based ceramics, while said distribution is determined quantitatively from said luminescent image of electron flow section converted from analog form into digital form. ^ EFFECT: expanded performances, development and control of accelerating hardware and high-precision electronics. ^ 5 cl, 4 dwg
申请公布号 RU2393505(C1) 申请公布日期 2010.06.27
申请号 RU20090117175 申请日期 2009.05.05
申请人 INSTITUT FIZIKI METALLOV URAL'SKOGO OTDELENIJA ROSSIJSKOJ AKADEMII NAUK, GOSUDARSTVENNOE UCHREZHDENIE 发明人 KURMAEV EHRNST ZAGIDOVICH;MIL'MAN IGOR' IGOREVICH;LITOVCHENKO EVGENIJ NIKOLAEVICH;SOLOV'EV SERGEJ NIKOLAEVICH;REVKOV IVAN GRIGOR'EVICH;FEDORENKO VIKTOR VASIL'EVICH;BUNTOV EVGENIJ ALEKSANDROVICH
分类号 B82B1/00;G01T1/29 主分类号 B82B1/00
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