| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can prevent electrostatic discharge breakdown of a circuit element and which uses a through electrode, and to provide a method of manufacturing the same. SOLUTION: The semiconductor device including a stack of semiconductor substrates 40 and 50 includes the through electrode 61 penetrating the semiconductor substrate 40, a circuit including a potential interconnect 13 expected to be connected to a first potential, a circuit including a potential interconnect 23 to be connected to the first potential, and an electrostatic discharge protection circuit 30, wherein the circuit 10 is provided to the semiconductor substrate 40, the circuit 20 is provided to the semiconductor substrate 50, and the potential interconnect 13 of the circuit 10 and the potential interconnect 23 of the circuit 20 are electrically connected to each other through the through electrode 61 and electrostatic discharge protection circuit 30. COPYRIGHT: (C)2010,JPO&INPIT |
