| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for exposing a semiconductor substrate capable of achieving a desired dimension of a resist by controlling the variation of focus during exposure without requiring a long TAT. <P>SOLUTION: The method for exposing a semiconductor substrate is a process of exposing and developing a desired resist pattern on the substrate (a), and includes: a first step (S101) of calculating the thickness of the resist applied on the semiconductor substrate with respect to each substrate, using equipment parameters in resist application treatment and pre-baking treatment (b); a second step (S102) of estimating the dimension of the resist of the exposed/developed resist pattern with respect to each substrate, using the thickness of the resist and the exposure parameters in the exposure treatment (c); and a third step (S103 and S105) of correcting the exposure parameters in the exposure treatment with respect to each substrate before exposure based on the dimension of the resist (d). <P>COPYRIGHT: (C)2010,JPO&INPIT |
