SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Provided is a semiconductor device manufacturing method wherein the following steps are performed: a step of forming at least a part of an element on a base body layer; a step of forming a peeling layer; a step of forming a planarizing film; a step of forming a die by cutting the base body layer at a cutting region; a step of bonding the die to a substrate by bonding the die on the planarizing film; and a step of separating and removing a part of the base body layer along the peeling layer.  Prior to the step of forming the die, a step of forming a groove opened on the surface of the planarizing film such that at least a part of the cutting region is included on the bottom surface of the groove, and forming the die such that the die has a polygonal outer shape wherein all the internal angles are obtuse by forming the groove is performed.