发明名称 |
NANOCRYSTAL MEMORY WITH DIFFERENTIAL ENERGY BANDS AND METHOD OF FORMATION |
摘要 |
A method of making a semiconductor device using a semiconductor substrate includes forming a first insulating layer having a first band energy over the semiconductor substrate. A first semiconductor layer having a second band energy is formed on the first insulating layer. The first semiconductor layer is annealed to form a plurality of first charge retainer globules from the first semiconductor layer. A first protective film is formed over each charge retainer globule of the plurality of first charge retainer globules. A second semiconductor layer is formed having a third band energy over the plurality of first charge retainer globules. The second semiconductor layer is annealed to form a plurality of storage globules from the second semiconductor layer over the plurality of first charge retainer globules. A magnitude of the second band energy is between a magnitude of the first band energy and a magnitude of the third band energy.
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申请公布号 |
US2010155824(A1) |
申请公布日期 |
2010.06.24 |
申请号 |
US20090436558 |
申请日期 |
2009.05.06 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
HONG CHEONG MIN;KANG SUNG-TAEG |
分类号 |
H01L29/792;H01L21/20 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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地址 |
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