| 摘要 |
Multi-structured memory is described, including a first memory configured to emulate a first memory type, a second memory configured to emulate a second memory type, the first and second memories disposed in one or more third dimensional memory arrays, and an interface configured to access the first memory or the second memory for data operations. The one or more third dimensional memory arrays are formed on the same component and can be fabricated BEOL on top of a substrate (e.g., a silicon wafer or other semiconductor substrates) including active circuitry (e.g., CMOS devices) fabricated FEOL and operative to perform data operations on the memory arrays and to communicate with external systems configured to access the memory arrays. The third dimensional memory(s) can include two-terminal non-volatile re-writeable cross-point memory arrays including two-terminal non-volatile re-writeable memory cells having their respective terminals electrically coupled with a pair of conductive array lines.
|
