| 摘要 |
<p>PURPOSE: A small scale MOS field effect transistor with an improved driving current property and a manufacturing method thereof are provided to form a shallow junction by inserting an ion 7°from the verticality of a silicon substrate. CONSTITUTION: A silicon substrate includes an active area(10) and an inactive area(20). The inactive area electrically insulates the active area. A trench is formed by etching the silicon substrate to have an interface with a predetermined depth. An edge(11) of the active area and an upper edge(23) of the trench are doped to a shallow junction. The doped area extends an effective channel width.</p> |
