| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the efficiency of light extraction from a semiconductor light emitting device. <P>SOLUTION: The semiconductor light emitting device 20 includes a surface electrode 13 formed on the first main surface of a group III-V semiconductor layer 21 having a light emitting layer 5, a reflection metal film 10 formed on a second main surface, a semiconductor layer 21 and a supporting substrate 11 connected through the reflection metal film 10, an ohmic contact joint 9 disposed in a region except just under the surface electrode 13 but in the portion of the face of the semiconductor layer 21 side of the reflection metal film 10. The semiconductor light emitting device 20 is ≤320 μm on a side. The surface electrode 13 has a polygonal or round shape with a circumferential length ≥235 μm and ≤700 μm. The ohmic contact joint 9 is disposed at the outer circumferential side or close to the outer circumference of the semiconductor light emitting device 20. The ohmic contact joint 9 surrounds the surface electrode 13 when viewed from the surface electrode 13 side. The distance L from each circumference position of the surface electrode 13 to the nearest ohmic contact joint 9 is the same. <P>COPYRIGHT: (C)2010,JPO&INPIT |
