SILICON-CONTAINING RESIST UNDERLAYER FILM FORMATION COMPOSITION HAVING ANION GROUP

摘要

Disclosed is a resist underlayer film formation composition for use in lithography for the purpose of forming a resist underlayer film that can be used as a hard mask. This resist underlayer film formation composition for use in lithography contains a silane compound that includes an anion group, wherein the silane compound that includes an anion group is: a hydrolyzable organosilane for which an organic group that includes an anion group bonds to a silicon atom and the anion group forms a salt structure; or, a hydrolysate thereof; or, a hydrolysis-condensation product thereof. The anion group is a carboxylic acid anion, a phenolate anion, a sulfonic acid anion, or a phosphonic acid anion. The hydrolyzable organosilane is represented by formula (1) R1 aR2 bSi(R3)4-(a+b). The composition contains a mixture of the hydrolyzable organosilane of formula (1) and at least one type of organosilicon compound selected from a group comprised of formula (2) R4 aSi(R5)4-a and formula (3)?R6 cSi(R7)3-c?2Yb; or, a hydrolysate thereof; or, a hydrolysis-condensation product thereof.