发明名称 COPPER DELAFOSSITE TRANSPARENT P-TYPE SEMICONDUCTOR: METHODS OF MANUFACTURE AND APPLICATIONS
摘要 Methods for fabrication of copper delafossite materials include a low temperature sol-gel process for synthesizing CuBO2 powders, and a pulsed laser deposition (PLD) process for forming thin films of CuBO2, using targets made of the CuBO2 powders. The CuBO2 thin films are optically transparent p-type semiconductor oxide thin films. Devices with CuBO2 thin films include p-type transparent thin film transistors (TTFT) comprising thin film CuBO2. as a channel layer and thin film solar cells with CuBO2 p-layers. Solid state dye sensitized solar cells (SS- DSSC) comprising CuBO2 in various forms, including "core-shell" and "nano-couple" particles, and methods of manufacture, are also described.
申请公布号 WO2010071893(A2) 申请公布日期 2010.06.24
申请号 WO2009US69055 申请日期 2009.12.21
申请人 APPLIED MATERIALS, INC.;SINGH, KAUSHAL, K.;NALAMASU, OMKARAM;KRISHNA, NETY, M.;SNURE, MICHAEL;TIWARI, ASHUTOSH 发明人 SINGH, KAUSHAL, K.;NALAMASU, OMKARAM;KRISHNA, NETY, M.;SNURE, MICHAEL;TIWARI, ASHUTOSH
分类号 H01L31/042 主分类号 H01L31/042
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