发明名称 |
METHOD FOR INITIALIZING MAGNETORESISTIVE ELEMENT, AND MAGNETORESISTIVE ELEMENT |
摘要 |
<p>Disclosed is a method for initializing a magnetoresistive element which comprises a magnetization recording layer that is a ferromagnetic layer. The magnetization recording layer comprises a magnetization reversal region having a reversible magnetization, a first magnetization fixed region connected to a first boundary of the magnetization reversal region, and a second magnetization fixed region connected to a second boundary of the magnetization reversal region. The method for initializing a magnetoresistive element comprises: a step wherein the magnetizations of the magnetization reversal region, the first magnetization fixed region and the second magnetization fixed region are directed to a first direction; and a step wherein a first magnetic field having a component in a second direction that is opposite to the first direction is applied to the magnetization recording layer, while passing a current between the first magnetization fixed region and the second magnetization fixed region through the magnetization reversal region.</p> |
申请公布号 |
WO2010071174(A1) |
申请公布日期 |
2010.06.24 |
申请号 |
WO2009JP71042 |
申请日期 |
2009.12.17 |
申请人 |
NEC CORPORATION;SUZUKI TETSUHIRO;OHSHIMA NORIKAZU;NAGAHARA KIYOKAZU;FUKAMI SHUNSUKE;ISHIWATA NOBUYUKI |
发明人 |
SUZUKI TETSUHIRO;OHSHIMA NORIKAZU;NAGAHARA KIYOKAZU;FUKAMI SHUNSUKE;ISHIWATA NOBUYUKI |
分类号 |
H01L21/8246;G11C11/15;H01L27/105;H01L29/82;H01L43/08 |
主分类号 |
H01L21/8246 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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