发明名称 REWORK METHOD OF METAL STRUCTURE OF SEMICONDUCTOR DEVICE
摘要 A rework method of a metal structure and devices thereof. A rework method may include forming a first metal layer over an insulating layer having a contact plug, a metal interconnection layer over a first metal layer and/or a second metal layer over a metal interconnection layer. A rework method may include performing a first wet etch process to remove first and/or second metal layers, except for a portion below a metal interconnection layer, removing a metal interconnection layer through a second wet etch process and/or planarizing a remaining portion of a first metal layer and/or a surface of an insulating layer through a first planarization process. An increase of a size of a contact hole, for example due to an over exposure of a contact hole, may be minimized.
申请公布号 US2010155794(A1) 申请公布日期 2010.06.24
申请号 US20090620836 申请日期 2009.11.18
申请人 SON SEUNG-WOO 发明人 SON SEUNG-WOO
分类号 H01L23/52;H01L21/768;H01L29/78 主分类号 H01L23/52
代理机构 代理人
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