METHOD FOR THE DEPOSITION OF MICROCRYSTALLINE SILICON ON A SUBSTRATE

摘要

The invention relates to a method for depositing microcrystalline silicon on a substrate in a plasma chamber system, comprising the following steps: the plasma chamber system contains at least one reactive, silicon-containing gas and hydrogen or exclusively hydrogen before the plasma is initiated; the plasma is initiated; exclusively reactive, silicon-containing gas or at least one mixture comprising a reactive, silicon-containing gas and hydrogen is continuously fed to the chamber system once the plasma has been initiated, the concentration of reactive, silicon-containing gas that is fed to the chamber being set at more than 0.5 percent; and the plasma performance is adjusted to within a range of 0.1 and 2.5 W/cm2 of electrode surface, a deposition rate exceeding 0.5 nm/s is selected, and the monocrystalline layer is deposited on the substrate at a thickness of less than 1000 nanometers.