| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device substrate, suppressing contraction of a substrate generated in a production process of a semiconductor device substrate, reducing faults generated by one cause of displacement of pattern portions or the like to be formed, and suppressing increasing of manufacturing costs and lowering of productivity. Ž<P>SOLUTION: In a process of forming a silicon oxide film, a silicon oxide film (241a) is formed on a glass substrate (210) by using a general film formation method such as a CVD method or the like. Here, film formation conditions in forming the silicon oxide film (241a) are adjusted so that a compressive stress in the silicon oxide film (241a) is 170 MPa or greater. Subsequently, in an annealing treatment process, an annealing treatment is carried out to the silicon oxide film (241a) under the temperature condition that a treatment temperature is set at a temperature of a distortion point of the glass substrate (210) or less, and at an annealing temperature of an activation temperature of a semiconductor layer to be formed on the glass substrate (210) or higher. In the present embodiment, the temperature of a distortion point of the glass substrate (210) is approximately 500°C. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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