| 发明名称 |
METHOD TO ENHANCE CHARGE TRAPPING |
| 摘要 |
Methods of improving charge trapping are disclosed. One such method includes forming an oxide-nitride-oxide tunnel stack and a silicon nitride layer on the oxide-nitride-oxide tunnel stack. This silicon nitride layer is implanted with ions. These ions may function as electron traps or as fields. The silicon nitride layer may be part of a flash memory device.
|
| 申请公布号 |
US2010155909(A1) |
申请公布日期 |
2010.06.24 |
| 申请号 |
US20090640760 |
申请日期 |
2009.12.17 |
| 申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. |
发明人 |
RAMAPPA DEEPAK;SHIM KYU-HA |
| 分类号 |
H01L23/00;H01L21/314 |
主分类号 |
H01L23/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
