ELECTRON BEAM ANNELING APPARATUS AND ANNEALING METHOD USING THE SAME
摘要
PURPOSE: An apparatus for annealing electron beam and a method for annealing using the same are provided to perform an activation process without the damage of a thin film deposed on a substrate by injecting the electron beam toward the substrate with a pulse manner and subsequently injecting reaction gas. CONSTITUTION: A substrate(120) is located within a chamber(110). A thin film(121) composed of a pre-set material is deposited on the substrate. An electron beam injecting unit(130) injects electronic beam into the pre-set area of the substrate in a pulse manner. A reaction gas is supplied to the inside of the chamber. A bias application unit(140) applies a bias voltage to the substrate.
申请公布号
KR20100068792(A)
申请公布日期
2010.06.24
申请号
KR20080127268
申请日期
2008.12.15
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
LEE, JUNG HYUN;KIM, JONG MIN;MA, DONG JOON;LEE, CHANG SOO