| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an etching solution having excellent wettability improving effect and excellent antifoaming property in etching, and providing a BM (Black Matrix) free from etching residue, and also to provide a method of manufacturing the BM. <P>SOLUTION: The etching solution used for the manufacture of the BM contains: at least 15-20 mass% ceric ammonium nitrate (a); 1-8 mass% one or both of nitric acid (b) and perchloric acid (c); and 0.01-0.1 mass% compound (d) expressed by general formula (1). <P>COPYRIGHT: (C)2010,JPO&INPIT |
