METHOD FOR PLANARIZATION ETCH WITH IN-SITU MONITORING BY INTERFEROMETRY PRIOR TO RECESS ETCH,申请号KR20047006645-传众专利搜索

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发明名称	METHOD FOR PLANARIZATION ETCH WITH IN-SITU MONITORING BY INTERFEROMETRY PRIOR TO RECESS ETCH
摘要
申请公布号	KR100965442(B1)	申请公布日期	2010.06.24
申请号	KR20047006645	申请日期	2002.10.30
申请人		发明人
分类号	H01L21/304;H01L27/04;H01L21/321;H01L21/3213;H01L21/66;H01L21/763;H01L21/822;H01L21/8242;H01L27/108	主分类号	H01L21/304
代理机构		代理人
主权项
地址

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