| 摘要 |
PURPOSE: A MOSFET(Metal Oxide Semiconductor Field Effect Transistor) and a manufacturing method are provided to prevent generation of a leakage current by dispersing a concentration of a stress to a lower edge part of a trench contact. CONSTITUTION: A plurality of trenches(101) is formed with etching a substrate(100). A trench-gate(122) is formed within the trench. A body region(110) is formed on a sidewall of the trench-gate. A part of the trench contact is formed within the substrate. The lower edge part of the trench contact is made of the side with rounded of a bent shape.
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