| 摘要 |
PURPOSE: A nonvolatile semiconductor memory device and a method for manufacturing the same are provided to reduce the interface state and the fixed charge of an interface by forming a silicon oxide layer on the interface between a silicon oxide film and a channel silicon crystalline film. CONSTITUTION: A laminate(14) is formed by alternatively laminating a plurality of inter-layer insulating films(12) and a gate electrode(13). A trench(15) is formed on the laminate. A charge storing film, a tunnel insulating film and a channel film is formed on the internal surface of the trench. A cavity is formed on the trench. The channel film is exposed to the internal surface of the cavity. |
