| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a compound semiconductor epitaxial wafer which can adjust a current gain by thermal treatment. SOLUTION: In the method of manufacturing a compound semiconductor epitaxial wafer, material gas is supplied on a heated substrate 1, and an epitaxial layer including a sub collector layer 2, a collector layer 3, a carbon-doped base layer 4, an emitter layer 5 and an emitter contact layer 6 is formed. Immediately after the emitter contact layer 6 is formed, thermal treatment is carried out. COPYRIGHT: (C)2010,JPO&INPIT
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