HALFTONE PHASE SHIFT MASK

摘要

PROBLEM TO BE SOLVED: To provide a halftone mask as a mask for forming a pattern having a half pitch of not more than 55 nm on a wafer, the mask controlling influences of a three-dimensional effect of the mask on transfer characteristics of the mask pattern to be desirable and giving a good transferred image having high contrast and a small MEEF (mask error enhancement factor).

SOLUTION: The halftone mask is used for immersion exposure by quadrupole polarization illumination through a high NA lens using an ArF excimer laser as an exposure light source, and has a pattern formed on a transparent substrate, the pattern comprising a single layer semitransparent film that transmits exposure light at a predetermined transmittance and changes phases. The mask pattern gives a node with a half pitch of 38 nm to 55 nm when transferred onto a wafer; and the phase difference between the transmitted light through the mask pattern of the semitransparent film and the transmitted light through the transparent substrate ranges from 161°to 172°.

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