RESISTANCE VARIABLE MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a stable magnetizing reversal over the wide range of an injection current by reducing a transition probability to a quasi-stable state. Ž

SOLUTION: A resistance variable memory device includes a resistance variable memory cell MC and a driving circuit that generates a combined pulse of write pulses (current value: Iz) constituted of a plurality of pulses and an offset pulse (current value Iz0) defining the level between pulses of the write pulses and supplies the generated combined pulse to the memory cell MC in writing. Ž

COPYRIGHT: (C)2010,JPO&INPIT Ž