THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THIN FILM TRANSISTOR, DISPLAY DEVICE, AND ELECTRONIC APPARATUS

摘要

<P>PROBLEM TO BE SOLVED: To provide a thin film transistor which can be microfabricated while maintaining transistor characteristics with a gate insulating film having excellent etching resistance. Ž<P>SOLUTION: The thin film transistor 1 has the gate insulating film 7 formed by laminating a polyparaxylylene layer 7b forming a surface layer and an organic insulating layer 7a made of a different material therefrom. On the polyparaxylylene layer 7b of the gate insulating film 7, a source electrode 9s and a drain electrode 9d are patterned and formed. On the polyparaxylylene layer 7b of the gate insulating film 7 between the source electrode 9s and drain electrode 9d, an organic semiconductor layer 11 is provided. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž