| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a transistor which has reduced temperature rise, has a prolonged life and has increased ON current and current mobility. Ž<P>SOLUTION: A semiconductor layer 1 has a first non-diffusion region 12 and a second non-diffusion region 13 respectively in contact with one width-direction end and the other width-direction end of a diffusion region 11 involving a source region 1s, a channel region 1ch and a drain region 1d. A gate electrode 3 includes a first electrode portion 31 disposed involving the channel region 1ch, a second electrode portion 32 disposed involving respective parts of one length-direction end 12a and the other length-direction end 12b of the first non-diffusion region 12 and also involving a width-direction end 12c of the first non-diffusion region 12, and a third electrode portion 33 disposed involving respective parts of one length-direction end 13a and the other length-direction end 13b of the second non-diffusion region 13 and also involving a width-direction end 13c of the second non-diffusion region 13. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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