发明名称 |
SEMICONDUCTOR DEVICE INCLUDING A CRYSTAL SEMICONDUCTOR LAYER, ITS FABRICATION AND ITS OPERATION |
摘要 |
In one embodiment, a method of fabricating a semiconductor device having a crystalline semiconductor layer includes preparing a semiconductor substrate and forming a preliminary active pattern on the semiconductor substrate. The preliminary active pattern includes a barrier pattern and a non-single crystal semiconductor pattern. A sacrificial non-single crystal semiconductor layer covers the preliminary active pattern and the semiconductor substrate. By crystallizing the sacrificial non-single crystal semiconductor layer and the non-single crystal semiconductor pattern, using the semiconductor substrate as a seed layer, the sacrificial non-single crystal semiconductor layer and the non-single crystal semiconductor pattern are changed to a sacrificial crystalline semiconductor layer and a crystalline semiconductor pattern, respectively. The crystalline semiconductor pattern and the barrier pattern constitute an active pattern. The sacrificial crystalline semiconductor layer is removed.
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申请公布号 |
US2010148260(A1) |
申请公布日期 |
2010.06.17 |
申请号 |
US20100710378 |
申请日期 |
2010.02.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM SUNG-MIN;YUN EUN-JUNG |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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