n-TYPE GALLIUM NITRIDE SINGLE CRYSTAL SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide an n-type free-standing GaN substrate that can be used as a substrate of a light emitting element or an electronic device and does not contain an Si dopant using a harmful raw material. Ž

SOLUTION: A free-standing film is obtained by purifying a raw material gas to fully eliminate water or oxygen, adding water or oxygen in a desired amount to HCL, NH3or hydrogen gas as the raw material gas, and epitaxially growing GaN on a GaAs substrate by HVPE (Halide Vapor Phase Epitaxy) or MOC (Metallorganic Chloride Vapor Phase Epitaxy) method. The obtained n-type GaN includes n-type carriers in proportion to the oxygen concentration. Ž

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