| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing an epitaxial wafer for an AlGaInP-based semiconductor light emitting device that can improve the surface flatness degree of an epitaxial wafer for the AlGaInP-based semiconductor light emitting device, thereby improving the yield of emission intensity when producing a light emitting diode chip. <P>SOLUTION: The method of manufacturing an epitaxial wafer 1 for the AlGaInP-based semiconductor light emitting device sequentially laminates an N-type AlGaInP-based cladding layer 4, an AlGaInP-based active layer 5, an P-type AlGaInP-based cladding layer 6, and a current diffusion layer 7 comprising GaP onto an N-type GaAs substrate 2, wherein the current diffusion layer 7 comprising GaP is first grown at the V/III ratio ≥1 and ≤100 (low V/III ratio part 8) and then is grown at the V/III ratio ≥100 and ≤200 (high V/III ratio part 9). <P>COPYRIGHT: (C)2010,JPO&INPIT |
