发明名称 |
MEASUREMENT OF DIFFRACTING STRUCTURE, BROADBAND, POLARIZED, ELLIPSOMETRY, AND UNDERLYING STRUCTURE |
摘要 |
PROBLEM TO BE SOLVED: To determine a grating shape parameter of a diffracting structure on a wafer. SOLUTION: Before the diffraction from the diffracting structure 12c on a semiconductor wafer 12a is measured, the film thickness and index of refraction of a film 12b underneath the structure are first measured using spectroscopic reflectometry 60 or spectroscopic ellipsometry 34 when required. A rigorous model is then used to calculate the intensity or the ellipsometric parameter of the diffracting structure 12c. The diffracting structure 12c is then measured using a spectroscopic scatterometer using polarized radiation and broadband radiation to obtain the intensity or an ellipsometric parameter of the diffracting structure 12c. The parameters and a reference database are used to determine the grating shape parameter. COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010133942(A) |
申请公布日期 |
2010.06.17 |
申请号 |
JP20090244176 |
申请日期 |
2009.10.23 |
申请人 |
KLA-TENCOR CORP |
发明人 |
XU YIPING;ABDULHALIM IBRAHIM |
分类号 |
G01B11/02;G01B11/06;G01B11/26;G01N21/21;G01N21/27;G01N21/41;G01N21/47;G01N21/95;G01N21/956;G03F7/20;H01L21/66 |
主分类号 |
G01B11/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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